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MPN:
Description:
VISHAY SI3127DV-T1-GE3 | Transistor: P-MOSFET; TrenchFET?; unipolar; -60V; -5.1A; Idm: -20
Attributes
| Key ^ | Value |
|---|---|
| Case | TSOP6 |
| Drain current | -5.1A |
| Drain-source voltage | -60V |
| Gate charge | 30nC |
| Gate-source voltage | ?20V |
| Kind of channel | enhanced |
| Kind of package | reel, |
| Manufacturer | VISHAY |
| Mounting | SMD |
| On-state resistance | 89m? |
| Polarisation | unipolar |
| Power dissipation | 2.7W |
| Pulsed drain current | -20A |
| Technology | TrenchFET? |
| Type of transistor | P-MOSFET |