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VISHAY SI3127DV-T1-GE3
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Description:
VISHAY SI3127DV-T1-GE3 | Transistor: P-MOSFET; TrenchFET?; unipolar; -60V; -5.1A; Idm: -20

Attributes

Key ^Value
CaseTSOP6
Drain current-5.1A
Drain-source voltage-60V
Gate charge30nC
Gate-source voltage?20V
Kind of channelenhanced
Kind of packagereel,
ManufacturerVISHAY
MountingSMD
On-state resistance89m?
Polarisationunipolar
Power dissipation2.7W
Pulsed drain current-20A
TechnologyTrenchFET?
Type of transistorP-MOSFET