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VISHAY SI7308DN-T1-GE3
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Description:
VISHAY SI7308DN-T1-GE3 | Transistor: N-MOSFET; TrenchFET?; unipolar; 60V; 6A; Idm: 20A; 12.7

Attributes

Key ^Value
CasePowerPAK? 1212-8
Drain current6A
Drain-source voltage60V
Gate charge13nC
Gate-source voltage?20V
Kind of channelenhanced
Kind of packagereel,
ManufacturerVISHAY
MountingSMD
On-state resistance72m?
Polarisationunipolar
Power dissipation12.7W
Pulsed drain current20A
TechnologyTrenchFET?
Type of transistorN-MOSFET