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Vishay SI7619DN-T1-GE3
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manufacturer:

Attributes

Key ^Value
Current - Continuous Drain (Id) @ 25?C24A (Tc)
Drain to Source Voltage (Vdss)30V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs50nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1350pF @ 15V
Lead Free Status / RoHS StatusRoHS Compliant
Manufacturer Part NumberSI7619DN-T1-GE3
Manufacturer Standard Lead Time12 Weeks
Mounting TypeSurface Mount
Operating Temperature-55
Package / Case, Supplier Device PackagePowerPAK
PackagingReel
Power Dissipation (Max)3.5W (Ta), 27.8W (Tc)
Rds On (Max) @ Id, Vgs21mOhm @ 10.5A, 10V
SeriesTrenchFET
Standard Package3,000
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 250