mpn:
brand:
manufacturer:
MPN:
Weight:
0.04
Weight:
0.04 LB
Preferred Price:
2.54
Price:
2.54
Min Simple Price:
0.6706
Absolute Min Price:
2.14
Min Price:
2.14
Dimensions:
[1.0, 1.0, 1.0]
qty:
69
simpleSku:
ODcwOQ:::SI7850DP-T1-E3.
sku:
ODcwOQ::OC:SI7850DP-T1-E3.@y0
condition:
11
seller:
Hotenda
amzMan:
vishay
HazMat:
False
DropShip:
False
Attributes
| Key ^ | Value |
|---|---|
| <a target="_blank" href="http | //www.ibselectronics.com/ibsstore/datasheet/Vishay/71625.pdf"> |
| Base Product Number | SI7850 |
| Brand | Vishay Semiconductors |
| Category | Discrete Semiconductor Products |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single, Quad Drain ; Triple Source |
| Current - Continuous Drain (Id) @ 25?C | 6.2A (Ta) |
| Dimensions | 5.99 x 5 x 1.07 mm |
| Drain Current, Id - Continuous Drain Current | 6.2 A |
| Drain to Source On Resistance | 0.031 Ohms |
| Drain to Source Voltage, Drain to Source Voltage (Vdss), Vds - Drain-Source Breakdown Voltage, Voltage, Breakdown, Drain to Source | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| FET Feature | - |
| FET Type, Polarization, Transistor Polarity | N-Channel |
| Forward Transconductance | 26 S |
| Forward Voltage, Diode | 0.85 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Gate to Source Voltage | ?20 V |
| Height | 0.042" (1.07mm) |
| Length | 0.235 in |
| Manufacturer | Vishay |
| Maximum Operating Temperature | +150 ?C, + 150 C |
| Mfr | Vishay Siliconix |
| Minimum Operating Temperature | -55 ?C |
| Mounting Style | SMD/SMT |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Number of Pins | 8 |
| Operating Temperature | -55?C ~ 150?C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | powerPAK-8 |
| Package / Case, Supplier Device Package | PowerPAK? SO-8 |
| Package Type | PowerPAK-SO-8 |
| Pd - Power Dissipation, Power Dissipation | 1.8 W |
| Power Dissipation (Max) | 1.8W (Ta) |
| Product Category | MOSFET |
| Product Header | TrenchFET? Power MOSFET |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 10.3A, 10V |
| Rds On - Drain-Source Resistance | 22 mOhms |
| Series | TrenchFET?, SI78 Series |
| Technology | MOSFET (Metal Oxide) |
| Temperature Operating Range | -55 to +150 ?C |
| Total Gate Charge | 18 nC |
| Tradename | TrenchFET |
| Turn Off Delay Time | 25 ns |
| Turn On Delay Time | 10 ns |
| Typical Gate Charge @ Vgs | 18 nC @ 10 V |
| Vgs (Max) | ?20V |
| Vgs - Gate-Source Breakdown Voltage | 20 V |
| Vgs(th) (Max) @ Id | 3V @ 250?A |
| Width | 0 in |
All Prices
| Img | Seller | Supplier SKU | Requested Price ^ | Calc MOQ Price | MOQ | In Stock | Lead Time | Brand | Weight | Preferred Tier |
|---|---|---|---|---|---|---|---|---|---|---|
| Hotenda | H1807159 | 0.6706 | 20.38624 | 1 | 72000 | Vishay/Siliconix | 0.6706 @ Qty: 50+ | |||
| us.rs-online.com | 70026127 | 0.98 | 29.792 | 1 | 50 | Siliconix / Vishay | 0.98 @ Qty: 50+ | |||
| Future Electronics | 2471688 | 1.15788 | 35.199552 | 1 | 168000 | Vishay | 1.15788 @ Qty: 50+ | |||
 | Newark | 06J8171 | 1.43 | 1758.9 | 3000 | 50 | VISHAY | 1.43 @ Qty: 3000+ | ||
 | IBS Electronics | SI7850DP-T1-E3 | 1.69 | 51.376 | 1 | 50 | Vishay | 1.69 @ Qty: 50+ | ||
| Digi-Key | 1764994 | 2.1643 | 65.79472 | 1 | 50 | Vishay Siliconix | 2.1643 @ Qty: 50+ | |||
| RS Delivers | 710-4764 | 2.6616 | 80.91264 | 1 | 50 | Vishay | 2.6616 @ Qty: 50+ |
