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Vishay SIHG61N65EF-GE3
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manufacturer:

Attributes

Key ^Value
Current - Continuous Drain (Id) @ 25?C64A (Tc)
Drain to Source Voltage (Vdss)650V
Drive Voltage (Max Rds On, Min Rds On)10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs371nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds7407pF @ 100V
Lead Free Status / RoHS StatusRoHS Compliant
Manufacturer Part NumberSIHG61N65EF-GE3
Mounting TypeThrough Hole
Operating Temperature-55
Package / CaseTO-247-3
PackagingTube
Power Dissipation (Max)520W (Tc)
Rds On (Max) @ Id, Vgs47mOhm @ 30.5A, 10V
SeriesE
Standard Package500
Supplier Device PackageTO-247AC
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 250