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VISHAY SIS890DN-T1-GE3
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manufacturer:
Description:
VISHAY SIS890DN-T1-GE3 | Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 60A; 33

Attributes

Key ^Value
CasePowerPAK? 1212-8
Drain current30A
Drain-source voltage100V
Gate charge29nC
Gate-source voltage?20V
Kind of channelenhanced
Kind of packagereel,
ManufacturerVISHAY
MountingSMD
On-state resistance23.5m?
Polarisationunipolar
Power dissipation33W
Pulsed drain current60A
Type of transistorN-MOSFET