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VISHAY SISS64DN-T1-GE3
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Description:
VISHAY SISS64DN-T1-GE3 | Transistor: N-MOSFET + Schottky; TrenchFET?; unipolar; 30V; 40

Attributes

Key ^Value
CasePowerPAK? 1212-8
Drain current40A
Drain-source voltage30V
Gate charge68nC
Gate-source voltage?20/?-16V
Kind of channelenhanced
Kind of packagereel,
ManufacturerVISHAY
MountingSMD
On-state resistance2.86m?
Polarisationunipolar
Power dissipation36W
Pulsed drain current100A
TechnologyTrenchFET?
Type of transistorN-MOSFET + Schottky