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Vishay General Semiconductor - Diodes Division NSB8MT-E3/81
Description:
Diode Standard 1000 V 8A Surface Mount TO-263AB (D?PAK)

Attributes

Key ^Value
Base Product NumberNSB8
Capacitance @ Vr, F55pF @ 4V, 1MHz
CategoryDiscrete Semiconductor Products
Current - Average Rectified (Io)8A
Current - Reverse Leakage @ Vr10 ?A @ 1000 V
Diode TypeStandard
MfrVishay General Semiconductor - Diodes Division
Mounting TypeSurface Mount
Operating Temperature - Junction-55?C ~ 150?C
PackageTape & Reel (TR)
Package / CaseTO-263-3, D?Pak (2 Leads + Tab), TO-263AB
Product StatusActive
Series-
SpeedStandard Recovery >500ns, > 200mA (Io)
Supplier Device PackageTO-263AB (D?PAK)
Voltage - DC Reverse (Vr) (Max)1000 V
Voltage - Forward (Vf) (Max) @ If1.1 V @ 8 A