Vishay General Semiconductor - Diodes Division VS-FB190SA10

mpnVS-FB190SA10
brandname: Vishay General Semiconductor - Diodes Division
manufacturername: Vishay General Semiconductor - Diodes Division

Attributes

Key	Value
Base Product Number	FB190
Category	Discrete Semiconductor .
Current - Continuous Dr.	190A (Tj)
Drain to Source Voltage.	100V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	250nC @ 10V
Input Capacitance (Ciss.	10700pF @ 25V
Mfr	Vishay General Semicond.
Mounting Type	Chassis Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tube
Package / Case	SOT-227-4, miniBLOC
Part Status	Obsolete
Power Dissipation (Max)	568W (Tc)
Rds On (Max) @ Id, Vgs	6.5mOhm @ 180A, 10V
Series	-
Supplier Device Package	SOT-227
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	4.35V @ 250?A