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Vishay General Semiconductor - Diodes Division VS-GT80DA120U
Description:
IGBT Module Trench Single 1200 V 139 A 658 W Chassis Mount SOT-227

Attributes

Key ^Value
Base Product NumberGT80
CategoryDiscrete Semiconductor Products
ConfigurationSingle
Current - Collector (Ic) (Max)139 A
Current - Collector Cutoff (Max)100 ?A
IGBT TypeTrench
InputStandard
Input Capacitance (Cies) @ Vce4.4 nF @ 25 V
MfrVishay General Semiconductor - Diodes Division
Mounting TypeChassis Mount
NTC ThermistorNo
Operating Temperature-40?C ~ 150?C (TJ)
PackageBulk
Package / CaseSOT-227-4, miniBLOC
Power - Max658 W
Product StatusActive
SeriesHEXFRED?
Supplier Device PackageSOT-227
Vce(on) (Max) @ Vge, Ic2.55V @ 15V, 80A
Voltage - Collector Emitter Breakdown (Max)1200 V