Attributes

Key Value
Channel TypeP
ConfigurationSingle
Dimensions10.51 x 4.65 x 15.49 mm
Drain Current-11 A
Drain to Source On Resi.0.5 Ohms
Drain to Source Voltage-200 V
Forward Transconductance4.1 S
Forward Voltage, Diode-5 V
Gate to Source Voltage+/-20 V
Height0.61" (15.49mm)
Input Capacitance1200 pF @ -25 V
Length0.413 in
Maximum Operating Tempe.+150 ?C
Minimum Operating Tempe.-55 ?C
Mounting TypeThrough Hole
Number of Elements per .1
Number of Pins3
Package TypeTO-220AB
PolarizationP-Channel
Power Dissipation125 W
Product HeaderHexfet? Power MOSFET
SeriesIRF Series
Temperature Operating R.-55 to +150 ?C
Total Gate Charge44 nC
Turn Off Delay Time39 ns
Turn On Delay Time14 ns
Typical Gate Charge @ V.Maximum of 44 nC @ -10 V
Voltage, Breakdown, Dra.-200 V
Width0 in
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