Attributes

Key Value
Base Product NumberIRF9640
CategoryDiscrete Semiconductor .
Current - Continuous Dr.11A (Tc)
Drain to Source Voltage.200 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .44 nC @ 10 V
Input Capacitance (Ciss.1200 pF @ 25 V
MfrVishay Siliconix
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-220-3
Power Dissipation (Max)125W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs500mOhm @ 6.6A, 10V
Series-
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A
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