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Vishay Siliconix IRFBF20PBF-BE3
manufacturer:

Attributes

Key ^Value
Base Product NumberIRFBF20
CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25?C1.7A (Tc)
Drain to Source Voltage (Vdss)900 V
FET Feature, Series-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds490 pF @ 25 V
MfrVishay Siliconix
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-220-3
Part StatusActive
Power Dissipation (Max)54W (Tc)
Rds On (Max) @ Id, Vgs8Ohm @ 1A, 10V
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A