Base Product Number | IRFD320 |
Case | DIP4 |
Category | Discrete Semiconductor Products |
Circuit Type, FET Type | N-Channel |
Current - Continuous Drain (Id) @ 25?C | 490mA (Ta) |
Drain current | 0.31A |
Drain Current Id(rms) | 0.49 A |
Drain Source Voltage Vds | 400 VDC |
Drain to Source Voltage (Vdss) | 400 V |
Drain-source voltage | 400V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Fall Time tf | 13 ns |
Family Series | Vishay Transistors, HVMDIP Series |
FET Feature, Series | - |
Gate charge | 20nC |
Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
Gate Leakage Current | 0.1 ?A |
Gate Source Voltage Vgss | 20 VDC |
Gate-source voltage, Vgs (Max) | ?20V |
Gross Weight, Net Weight | 0 lbs |
Input Capacitance (Ciss) (Max) @ Vds | 410 pF @ 25 V |
Item Number, Manufacturer Part Number | IRFD320PBF |
Kind of channel | enhanced |
Manufacturer | VISHAY |
Mfr | Vishay Siliconix |
Mounting | THT |
Mounting Type | Through Hole |
On-state resistance | 1.8? |
Operating Temperature | -55?C ~ 150?C (TJ) |
Package | Tube |
Package / Case | 4-DIP (0.300", 7.62mm) |
Package, Product Series | HVMDIP |
Part Status | Active |
Polarisation | unipolar |
Power dissipation | 1W |
Power Dissipation (Max) | 1W (Ta) |
Rds On (Max) @ Id, Vgs | 1.8Ohm @ 210mA, 10V |
rDS(on) | 1,800 mOhm |
Rise Time tr | 14 ns |
RoHS | Yes |
Supplier Device Package | 4-HVMDIP |
Technology | MOSFET (Metal Oxide) |
Trr | 270 ns |
Turn Off Delay Time | 30 ns |
Turn On Delay Time | 10 ns |
Typ. Vgs(th) | 3 VDC |
Type of transistor | N-MOSFET |
Vgs(th) (Max) @ Id | 4V @ 250?A |