Attributes

Key Value
Base Product NumberIRFI9630
CategoryDiscrete Semiconductor .
Current - Continuous Dr.4.3A (Tc)
DescriptionMOSFET P-CH 200V 4.3A T.
Detailed DescriptionP-Channel 200 V 4.3A (T.
Digi-Key Part NumberIRFI9630GPBF-ND
Drain to Source Voltage.200 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .29 nC @ 10 V
Input Capacitance (Ciss.700 pF @ 25 V
ManufacturerVishay Siliconix
Manufacturer Product Nu.IRFI9630GPBF
Manufacturer Standard L.17 Weeks
MfrVishay Siliconix
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-220-3 Full Pack, Iso.
Power Dissipation (Max)35W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs800mOhm @ 2.6A, 10V
Series-
Supplier Device PackageTO-220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A
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