Base Product Number | IRFIBF20 |
Case | TO220FP |
Category | Discrete Semiconductor Products |
Circuit Type | N-Channel |
Current - Continuous Drain (Id) @ 25?C | 1.2A (Tc) |
Description | MOSFET N-CH 900V 1.2A TO220-3 |
Detailed Description | N-Channel 900 V 1.2A (Tc) 30W (Tc) Through Hole TO-220-3 |
device function | mosfet |
device package type | to-220 |
Digi-Key Part Number | 742-IRFIBF20GPBF-ND |
Drain current | 0.79A |
Drain Current Id(rms) | 1.2 A |
Drain Source Voltage Vds | 900 VDC |
Drain to Source Voltage (Vdss) | 900 V |
Drain-source voltage | 900V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Fall Time tf | 32 ns |
Family Series | Vishay Transistors, FULLPAK Series |
FET Feature | - |
FET Type | N-Channel |
Gate charge | 38nC |
Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
Gate Leakage Current | 0.1 ?A |
Gate Source Voltage Vgss | 20 VDC |
Gate-source voltage | ?20V |
Gross Weight | 0 lbs |
Input Capacitance (Ciss) (Max) @ Vds | 490 pF @ 25 V |
Item Number | IRFIBF20GPBF |
item per pack | 1 |
Kind of channel | enhanced |
Kind of package | tube |
Manufacturer | Vishay Siliconix, VISHAY |
Manufacturer Part Number | IRFIBF20GPBF |
Manufacturer Product Number | IRFIBF20GPBF |
Manufacturer Standard Lead Time | 17 Weeks |
Mfr | Vishay Siliconix |
Mounting | THT |
Mounting Type | Through Hole |
Net Weight | 0 lbs |
On-state resistance | 8? |
Operating Temperature | -55?C ~ 150?C (TJ) |
Package | tube, TO-220 FULLPAK |
package | tube |
Package / Case | TO-220-3 Full Pack, Isolated Tab |
Polarisation | unipolar |
Power dissipation | 30W |
Power Dissipation (Max) | 30W (Tc) |
Product Series | FULLPAK |
Product Status | Active |
Rds On (Max) @ Id, Vgs | 8Ohm @ 720mA, 10V |
rDS(on) | 8,000 mOhm |
Rise Time tr | 21 ns |
RoHS | Yes |
Series | - |
Supplier Device Package | TO-220-3 |
Technology | MOSFET (Metal Oxide) |
Trr | 350 ns |
Turn Off Delay Time | 56 ns |
Turn On Delay Time | 8 ns |
Typ. Vgs(th) | 3 VDC |
Type of transistor | N-MOSFET |
Vgs (Max) | ?20V |
Vgs(th) (Max) @ Id | 4V @ 250?A |