mpn:
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MPN:
Description:
N-Channel 900 V 1.2A (Tc) 30W (Tc) Through Hole TO-220-3
Attributes
| Key | Value |
|---|---|
| Base Product Number | IRFIBF20 |
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25?C | 1.2A (Tc) |
| Description | MOSFET N-CH 900V 1.2A TO220-3 |
| Detailed Description | N-Channel 900 V 1.2A (Tc) 30W (Tc) Through Hole TO-220-3 |
| Digi-Key Part Number | 742-IRFIBF20GPBF-ND |
| Drain to Source Voltage (Vdss) | 900 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 490 pF @ 25 V |
| Manufacturer | Vishay Siliconix |
| Manufacturer Product Number | IRFIBF20GPBF |
| Manufacturer Standard Lead Time | 17 Weeks |
| Mfr | Vishay Siliconix |
| Mounting Type | Through Hole |
| Operating Temperature | -55?C ~ 150?C (TJ) |
| Package | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Power Dissipation (Max) | 30W (Tc) |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 8Ohm @ 720mA, 10V |
| Series | - |
| Supplier Device Package | TO-220-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ?20V |
| Vgs(th) (Max) @ Id | 4V @ 250?A |