Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.8.8A (Tc)
Drain to Source Voltage.60V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .19nC @ 10V
Input Capacitance (Ciss.570pF @ 25V
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads.
Part StatusActive
Power Dissipation (Max)2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs280mOhm @ 5.3A, 10V
Series-
Supplier Device PackageD-PAK (TO-252AA)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A
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