Alternate Part No. | 844-IRFU1N60APBF |
Alternate Parts | IRFU1N60A |
Base Product Number | IRFU1 |
Brand | Vishay / Siliconix |
Category | Discrete Semiconductor Products |
Channel Mode | Enhancement |
Circuit Type, FET Type, Transistor Polarity | N-Channel |
Configuration | Single |
Current - Continuous Drain (Id) @ 25?C | 1.4A (Tc) |
Description | MOSFET N-CH 600V 1.4A TO251AA |
Detailed Description | N-Channel 600 V 1.4A (Tc) 36W (Tc) Through Hole TO-251AA |
Digi-Key Part Number | 742-IRFU1N60APBF-ND |
Drain Current Id(rms), Id - Continuous Drain Current | 1.4 A |
Drain Source Voltage Vds | 600 VDC |
Drain to Source Voltage (Vdss) | 600V |
Drain to Source Voltage (Vdss), Vds - Drain-Source Breakdown Voltage | 600 V |
Drive Voltage (Max Rds On, Min Rds On), Drive Voltage (Max Rds On, Min Rds On) | 10V |
Fall Time, Fall Time tf | 20 ns |
Family Series | Vishay Transistors, IPAK Series |
FET Feature, Series | - |
Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V, 14nC @ 10V |
Gate Leakage Current | 0.1 ?A |
Gate Source Voltage Vgss | 30 VDC |
Gross Weight, Net Weight | 0 lbs |
Input Capacitance (Ciss) (Max) @ Vds | 229pF @ 25V, 229 pF @ 25 V |
Item Number, Manufacturer Part No., Manufacturer Part Number, Manufacturer Product Number | IRFU1N60APBF |
Lead Free Status / RoHS Status | RoHS Compliant |
Manufacturer | Vishay |
Manufacturer Standard Lead Time | 10 Weeks, 17 Weeks |
Manufacturer, Mfr | Vishay Siliconix |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Mounting Style, Mounting Type | Through Hole |
Operating Temperature | -55, -55?C ~ 150?C (TJ) |
Package | TO-251 |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Package, Packaging | Tube |
Package/Case | IPAK-3 |
Pd - Power Dissipation | 36 W |
Power Dissipation (Max) | 36W (Tc) |
Product Category | MOSFET |
Product Series | IPAK |
Product Status | Active |
Rds On (Max) @ Id, Vgs | 7Ohm @ 840mA, 10V |
Rds On - Drain-Source Resistance | 7 Ohms |
rDS(on) | 7,000 mOhm |
Rise Time, Rise Time tr | 14 ns |
RoHS | Yes |
Series | IRF/SIHRx1N60A |
Standard Package | 75 |
Supplier Device Package | TO-251AA |
Technology | MOSFET (Metal Oxide) |
Trr | 290 ns |
Turn Off Delay Time, Typical Turn-Off Delay Time | 18 ns |
Turn On Delay Time | 9.8 ns |
Typ. Vgs(th) | 3 VDC |
Vgs (Max) | ?30V |
Vgs - Gate-Source Breakdown Voltage | 30 V |
Vgs(th) (Max) @ Id | 4V @ 250?A, 4V @ 250 |