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Vishay Siliconix IRFU1N60APBF
Vishay Siliconixzoom
manufacturer:
Description:
N-Channel 600 V 1.4A (Tc) 36W (Tc) Through Hole TO-251AA

Attributes

Key ^Value
Base Product NumberIRFU1
CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25?C1.4A (Tc)
DescriptionMOSFET N-CH 600V 1.4A TO251AA
Detailed DescriptionN-Channel 600 V 1.4A (Tc) 36W (Tc) Through Hole TO-251AA
Digi-Key Part Number742-IRFU1N60APBF-ND
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10V
FET Feature, Series-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds229 pF @ 25 V
Manufacturer Product NumberIRFU1N60APBF
Manufacturer Standard Lead Time17 Weeks
Manufacturer, MfrVishay Siliconix
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Power Dissipation (Max)36W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs7Ohm @ 840mA, 10V
Supplier Device PackageTO-251AA
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id4V @ 250?A