Attributes

Key Value
Base Product NumberSI2309
CategoryDiscrete Semiconductor .
Current - Continuous Dr.1.6A (Tc)
DescriptionMOSFET P-CH 60V 1.6A SO.
Detailed DescriptionP-Channel 60 V 1.6A (Tc.
Digi-Key Part NumberSI2309CDS-T1-GE3TR-ND -.
Drain to Source Voltage.60 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .4.1 nC @ 4.5 V
Input Capacitance (Ciss.210 pF @ 30 V
ManufacturerVishay Siliconix
Manufacturer Product Nu.SI2309CDS-T1-GE3
Manufacturer Standard L.17 Weeks
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23.
Power Dissipation (Max)1W (Ta), 1.7W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs345mOhm @ 1.25A, 10V
SeriesTrenchFET?
Supplier Device PackageSOT-23-3 (TO-236)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3V @ 250?A
prev