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Description:
P-Channel 8 V 3A (Ta) 710mW (Ta) Surface Mount SOT-23-3 (TO-236)
Attributes
| Key ^ | Value |
|---|---|
| Base Product Number | SI2311 |
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25?C | 3A (Ta) |
| Description | MOSFET P-CH 8V 3A SOT23-3 |
| Detailed Description | P-Channel 8 V 3A (Ta) 710mW (Ta) Surface Mount SOT-23-3 (TO-236) |
| Digi-Key Part Number | SI2311DS-T1-GE3-ND - Tape & Reel (TR) |
| Drain to Source Voltage (Vdss) | 8 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 970 pF @ 4 V |
| Manufacturer Product Number | SI2311DS-T1-GE3 |
| Manufacturer, Mfr | Vishay Siliconix |
| Mounting Type | Surface Mount |
| Operating Temperature | -55?C ~ 150?C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Power Dissipation (Max) | 710mW (Ta) |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 3.5A, 4.5V |
| Series | TrenchFET? |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ?8V |
| Vgs(th) (Max) @ Id | 800mV @ 250?A |