Vishay Siliconix SI2327DS-T1-GE3

mpnSI2327DS-T1-GE3
brandname: Vishay Siliconix
manufacturername: Vishay Siliconix

Attributes

Key	Value
Base Product Number	SI2327
Category	Discrete Semiconductor .
Current - Continuous Dr.	380mA (Ta)
Drain to Source Voltage.	200 V
Drive Voltage (Max Rds .	6V, 10V
FET Feature	-
FET Type	P-Channel
Gate Charge (Qg) (Max) .	12 nC @ 10 V
Input Capacitance (Ciss.	510 pF @ 25 V
Mfr	Vishay Siliconix
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	TO-236-3, SC-59, SOT-23.
Part Status	Obsolete
Power Dissipation (Max)	750mW (Ta)
Rds On (Max) @ Id, Vgs	2.35Ohm @ 500mA, 10V
Series	TrenchFET?
Supplier Device Package	SOT-23-3 (TO-236)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	4.5V @ 250?A