B011NNE3KA

VISHAY SILICONIX SI2328DS-T1-GE3 MOSFET, N-CH, 100V, 1.5A, SOT23 (100 pieces)

VISHAY SILICONIX SI2328DS-T1-GE3 MOSFET, N-CH, 100V, 1.5A, SOT23 (100 pieces)zoom

Attributes

Key Value
Alternate Part No.781-SI2328DS-GE3
Base Product NumberSI2328
BrandVishay / Siliconix
CategoryDiscrete Semiconductor .
ConfigurationSingle
Current - Continuous Dr.1.15A (Ta)
DescriptionMOSFET N-CH 100V 1.15A .
Detailed DescriptionN-Channel 100 V 1.15A (.
Digi-Key Part NumberSI2328DS-T1-GE3TR-ND - .
Drain to Source Voltage.100 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .5 nC @ 10 V
Id - Continuous Drain C.1.5 A
ManufacturerVishay Siliconix, Vishay
Manufacturer Part No.SI2328DS-T1-GE3
Manufacturer Product Nu.SI2328DS-T1-GE3
Manufacturer Standard L.99 Weeks
Maximum Operating Tempe.+ 150 C
MfrVishay Siliconix
Minimum Operating Tempe.- 55 C
Mounting StyleSMD/SMT
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23.
Package/CaseSOT-23-3
PackagingReel
Part # AliasesSI2328DS-GE3
Pd - Power Dissipation730 mW
Power Dissipation (Max)730mW (Ta)
Product CategoryMOSFET
Product StatusActive
Rds On (Max) @ Id, Vgs250mOhm @ 1.5A, 10V
Rds On - Drain-Source R.250 mOhms
SeriesTrenchFET?
Supplier Device PackageSOT-23-3 (TO-236)
TechnologyMOSFET (Metal Oxide)
Transistor PolarityN-Channel
Vds - Drain-Source Brea.100 V
Vgs (Max)?20V
Vgs - Gate-Source Break.20 V
Vgs(th) (Max) @ Id4V @ 250?A

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
HotendaH18085800.2247516000Vishay/Siliconix0.22475 @ 1
thumbzoomTMESI2328DS-T1-GE30.4331134VISHAY0.43 @ 3
Future Electronics70981650.44416764Vishay0.444 @ 1
thumbzoomNewark63W41421.0156320VISHAY1.01 @ 5
thumbzoomDigi-Key24415891.03218350Vishay Siliconix1.032 @ 1
thumbzoomswatee.comSI2328DS-T1-GE31.0511821Vishay1.05 @ 1
RS Delivers787-9229P1.18441101Vishay1.1844 @ 1
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