Vishay Siliconix SI2333DS-T1-E3

mpnSI2333DS-T1-E3
brandname: Vishay Siliconix
manufacturername: Vishay Siliconix

Attributes

Key	Value
Base Product Number	SI2333
Category	Discrete Semiconductor .
Current - Continuous Dr.	4.1A (Ta)
Drain to Source Voltage.	12 V
Drive Voltage (Max Rds .	1.8V, 4.5V
FET Feature	-
FET Type	P-Channel
Gate Charge (Qg) (Max) .	18 nC @ 4.5 V
Input Capacitance (Ciss.	1100 pF @ 6 V
Mfr	Vishay Siliconix
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	TO-236-3, SC-59, SOT-23.
Part Status	Active
Power Dissipation (Max)	750mW (Ta)
Rds On (Max) @ Id, Vgs	32mOhm @ 5.3A, 4.5V
Series	TrenchFET?
Supplier Device Package	SOT-23-3 (TO-236)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?8V
Vgs(th) (Max) @ Id	1V @ 250?A