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Vishay Siliconix SI3127DV-T1-GE3
manufacturer:

Attributes

Key ^Value
Base Product NumberSI3127
CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25?C3.5A (Ta), 13A (Tc)
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds833 pF @ 20 V
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Part StatusActive
Power Dissipation (Max)2W (Ta), 4.2W (Tc)
Rds On (Max) @ Id, Vgs89mOhm @ 1.5A, 4.5V
SeriesTrenchFET?
Supplier Device Package6-TSOP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3V @ 250?A