Vishay Siliconix SI3430DV-T1-E3

mpnSI3430DV-T1-E3
brandname: Vishay Siliconix
manufacturername: Vishay Siliconix

Attributes

Key	Value
Base Product Number	SI3430
Category	Discrete Semiconductor .
Current - Continuous Dr.	1.8A (Ta)
Drain to Source Voltage.	100 V
Drive Voltage (Max Rds .	6V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	6.6 nC @ 10 V
Mfr	Vishay Siliconix
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	SOT-23-6 Thin, TSOT-23-6
Power Dissipation (Max)	1.14W (Ta)
Product Status	Active
Rds On (Max) @ Id, Vgs	170mOhm @ 2.4A, 10V
Series	-
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	2V @ 250?A (Min)