Attributes

Key Value
Base Product NumberSI4170
CategoryDiscrete Semiconductor .
Current - Continuous Dr.30A (Tc)
Drain to Source Voltage.30 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .100 nC @ 10 V
Input Capacitance (Ciss.4355 pF @ 15 V
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm .
Part StatusObsolete
Power Dissipation (Max)3W (Ta), 6W (Tc)
Rds On (Max) @ Id, Vgs3.5mOhm @ 15A, 10V
SeriesTrenchFET?
Supplier Device Package8-SOIC
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.6V @ 250?A
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