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Vishay Siliconix SI4497DY-T1-GE3
manufacturer:
Description:
P-Channel 30 V 36A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SOIC

Attributes

Key Value
Base Product NumberSI4497
CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25?C36A (Tc)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds9685 pF @ 15 V
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width)
Power Dissipation (Max)3.5W (Ta), 7.8W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs3.3mOhm @ 20A, 10V
SeriesTrenchFET?
Supplier Device Package8-SOIC
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.5V @ 250?A