SI4909DY-T1-GE3

B011NNAKM0

VISHAY SILICONIX SI4909DY-T1-GE3 MOSFET, PP CHANNEL, W/D DIODE, 40V, 8A,SO8 (5 pieces)

VISHAY SILICONIX SI4909DY-T1-GE3 MOSFET, PP CHANNEL, W/D DIODE, 40V, 8A,SO8 (5 pieces)zoom

Attributes

Key Value
Alternate Part No.78-SI4909DY-T1-GE3
Base Product NumberSI4909
BrandVishay / Siliconix
CategoryDiscrete Semiconductor .
Channel ModeEnhancement
ConfigurationDual
Current - Continuous Dr.8A
Drain to Source Voltage.40V
Fall Time13 ns
FET FeatureLogic Level Gate
FET Type2 P-Channel (Dual)
Forward Transconductanc.22 S
Gate Charge (Qg) (Max) .63nC @ 10V
Id - Continuous Drain C.8 A
Input Capacitance (Ciss.2000pF @ 20V
ManufacturerVishay
Manufacturer Part No.SI4909DY-T1-GE3
Maximum Operating Tempe.+ 150 C
MfrVishay Siliconix
Minimum Operating Tempe.- 55 C
Mounting StyleSMD/SMT
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm .
Package/CaseSO-8
PackagingReel
Part StatusActive
Pd - Power Dissipation3.2 W
Power - Max3.2W
Product CategoryMOSFET
Qg - Gate Charge21.7 nC
Rds On (Max) @ Id, Vgs27mOhm @ 8A, 10V
Rds On - Drain-Source R.27 mOhms
Rise Time9 ns
SeriesTrenchFET?, SI4909DY, S.
Supplier Device Package8-SO
TradenameTrenchFET
Transistor PolarityP-Channel
Typical Turn-Off Delay .50 ns
Vds - Drain-Source Brea.- 40 V
Vgs - Gate-Source Break.20 V
Vgs th - Gate-Source Th.- 1.2 V to - 2.5 V
Vgs(th) (Max) @ Id2.5V @ 250?A

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
thumbzoomNewark70AC65080.6272500100VISHAY0.627 @ 2500
Digi-Key44396410.872851100vishay-siliconix0.87285 @ 100
us.rs-online.com706169770.89100100Siliconix / Vishay0.89 @ 100
RS Delivers818-1302P1.19641100Vishay1.1964 @ 100
thumbzoomswatee.comSI4909DY-T1-GE32.4811843Vishay2.48 @ 100
© 2025 · Data Alchemy · Version 60 · ts:1760052239
prev