B011NB3T4S

VISHAY SILICONIX SI7386DP-T1-E3 N CHANNEL MOSFET, 30V, 19A, SOIC (1 piece)

VISHAY SILICONIX SI7386DP-T1-E3 N CHANNEL MOSFET, 30V, 19A, SOIC (1 piece)zoom

Attributes

Key Value
Base Product NumberSI7386
CategoryDiscrete Semiconductor .
Current - Continuous Dr.12A (Ta)
DescriptionMOSFET N-CH 30V 12A PPA.
Detailed DescriptionN-Channel 30 V 12A (Ta).
Digi-Key Part NumberSI7386DP-T1-E3TR-ND - T.
Drain to Source Voltage.30 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .18 nC @ 4.5 V
ManufacturerVishay Siliconix
Manufacturer Product Nu.SI7386DP-T1-E3
Manufacturer Standard L.99 Weeks
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CasePowerPAK? SO-8
Power Dissipation (Max)1.8W (Ta)
Product StatusActive
Rds On (Max) @ Id, Vgs7mOhm @ 19A, 10V
SeriesTrenchFET?
Supplier Device PackagePowerPAK? SO-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.5V @ 250?A

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
Win SourceSI7386DP-T1-E30.4661101000Vishay0.466 @ 110
HotendaH18070020.487216000Vishay/Siliconix0.4872 @ 5
Future Electronics62878170.83430005Vishay0.834 @ 3000
Newark22M88650.87330005VISHAY0.873 @ 2000
thumbzoomComponent Electronics7386DP-T1-E3-SILICON1.541100Siliconix1.54 @ 5
thumbzoomDigi-Key16566071.94413994Vishay Siliconix1.944 @ 5
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