| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Drain Current-Max (ID) | 6 A |
| Drain-source On Resistance-Max | 30 m? |
| DS Breakdown Voltage-Min | 20 V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PDSO-G8 |
| JESD-609 Code | e0 |
| Manufacturer | Vishay Siliconix |
| Manufacturer Part Number | SI9926DY-T1 |
| Number of Elements | 2 |
| Number of Terminals, Pin Count | 8 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Description | SMALL OUTLINE, R-PDSO-G8 |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Packaging | - |
| Part Package Code | SOT |
| Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 20 A |
| Qualification Status | Not Qualified |