SIA406DJ-T1-GE3

B00LQQAH1O

MOSFET 12V 4.5A 19W 19.8mohm @ 4.5V (50 pieces)

MOSFET 12V 4.5A 19W 19.8mohm @ 4.5V (50 pieces)zoom

Attributes

Key Value
Base Product NumberSIA406
CategoryDiscrete Semiconductor .
Current - Continuous Dr.4.5A (Tc)
Drain to Source Voltage.12 V
Drive Voltage (Max Rds .1.8V, 4.5V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .23 nC @ 5 V
Input Capacitance (Ciss.1380 pF @ 6 V
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CasePowerPAK? SC-70-6
Power Dissipation (Max)3.5W (Ta), 19W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs19.8mOhm @ 10.8A, 4.5V
SeriesTrenchFET?
Supplier Device PackagePowerPAK? SC-70-6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?8V
Vgs(th) (Max) @ Id1V @ 250?A

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
HotendaH18125920.155150Vishay/Siliconix0.155 @ 50
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