SIB433EDK-T1-GE3-VISHAY

B00HKZ35YQ

VISHAY SILICONIX SIB433EDK-T1-GE3 MOSFET, P CH, -20V, -9A, POWERPAK SC75-6 (1 piece)

VISHAY SILICONIX SIB433EDK-T1-GE3 MOSFET, P CH, -20V, -9A, POWERPAK SC75-6 (1 piece)zoom

Attributes

Key Value
Alternate Part No.781-SIB433EDK-T1-GE3
Base Product NumberSIB433
BrandVishay / Siliconix
CategoryDiscrete Semiconductor .
ConfigurationSingle
Current - Continuous Dr.9A (Tc)
Drain to Source Voltage.20 V
Drive Voltage (Max Rds .1.8V, 4.5V
FET Feature-
FET TypeP-Channel
Forward Transconductanc.12 S
Gate Charge (Qg) (Max) .21 nC @ 8 V
Id - Continuous Drain C.- 9 A
ManufacturerVishay
Manufacturer Part No.SIB433EDK-T1-GE3
Maximum Operating Tempe.+ 150 C
MfrVishay Siliconix
Minimum Operating Tempe.- 55 C
Mounting StyleSMD/SMT
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CasePowerPAK? SC-75-6
Package/CasePowerPAK SC-75-6
PackagingReel
Part # AliasesSIB433EDK-GE3
Part StatusActive
Pd - Power Dissipation13 W
Power Dissipation (Max)2.4W (Ta), 13W (Tc)
Product CategoryMOSFET
Qg - Gate Charge14 nC
Rds On (Max) @ Id, Vgs58mOhm @ 3.7A, 4.5V
Rds On - Drain-Source R.47 mOhms
SeriesTrenchFET?
Supplier Device PackagePowerPAK? SC-75-6
TechnologyMOSFET (Metal Oxide)
Transistor PolarityP-Channel
Type of transistorP-MOSFET
Vds - Drain-Source Brea.- 20 V
Vgs (Max)?8V
Vgs th - Gate-Source Th.- 0.4 V to - 1 V
Vgs(th) (Max) @ Id1V @ 250?A

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
HotendaH18083890.1782519000Vishay/Siliconix0.17825 @ 100
thumbzoomNewark86R37920.2033000100VISHAY0.203 @ 100
TMESIB433EDK-T1-GE30.2833000100VISHAY0.283 @ 3000
Digi-Key24417830.407331000100Vishay Siliconix0.40733 @ 100
Future Electronics81179870.4681100Vishay0.468 @ 100
thumbzoomswatee.comSIB433EDK-T1-GE30.8912315Vishay0.89 @ 100
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