Attributes

Key Value
Base Product NumberSIB433
CategoryDiscrete Semiconductor .
Current - Continuous Dr.9A (Tc)
Drain to Source Voltage.20 V
Drive Voltage (Max Rds .1.8V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .21 nC @ 8 V
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CasePowerPAK? SC-75-6
Part StatusActive
Power Dissipation (Max)2.4W (Ta), 13W (Tc)
Rds On (Max) @ Id, Vgs58mOhm @ 3.7A, 4.5V
SeriesTrenchFET?
Supplier Device PackagePowerPAK? SC-75-6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?8V
Vgs(th) (Max) @ Id1V @ 250?A
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