Attributes

Key Value
Base Product NumberSIHG47
CategoryDiscrete Semiconductor .
Current - Continuous Dr.47A (Tc)
DescriptionMOSFET N-CH 600V 47A TO.
Detailed DescriptionN-Channel 600 V 47A (Tc.
Digi-Key Part NumberSIHG47N60E-GE3-ND
Drain to Source Voltage.600 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .220 nC @ 10 V
Input Capacitance (Ciss.9620 pF @ 100 V
ManufacturerVishay Siliconix
Manufacturer Product Nu.SIHG47N60E-GE3
Manufacturer Standard L.32 Weeks
MfrVishay Siliconix
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-247-3
Power Dissipation (Max)357W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs64mOhm @ 24A, 10V
Series-
Supplier Device PackageTO-247AC
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id4V @ 250?A
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