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Vishay Siliconix SIHG61N65EF-GE3
manufacturer:
Description:
N-Channel 650 V 64A (Tc) 520W (Tc) Through Hole TO-247AC

Attributes

Key ^Value
Base Product NumberSIHG61
CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25?C64A (Tc)
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs371 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7407 pF @ 100 V
MfrVishay Siliconix
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-247-3
Power Dissipation (Max)520W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs47mOhm @ 30.5A, 10V
SeriesE
Supplier Device PackageTO-247AC
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id4V @ 250?A