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Vishay Siliconix SIHH28N60E-T1-GE3
Vishay Siliconixzoom
manufacturer:

Attributes

Key ^Value
Current - Continuous Drain (Id) @ 25?C29A (Tc)
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs129 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2614 pF @ 100 V
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
Package / Case8-PowerTDFN
Part StatusActive
Power Dissipation (Max)202W (Tc)
Rds On (Max) @ Id, Vgs98mOhm @ 14A, 10V
Supplier Device PackagePowerPAK? 8 x 8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id5V @ 250?A