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Vishay Siliconix SIHP186N60EF-GE3
manufacturer:
Description:
N-Channel 600 V 18A (Tc) 156W (Tc) Through Hole TO-220AB

Attributes

Key ^Value
Base Product NumberSIHP186
CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25?C18A (Tc)
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1081 pF @ 100 V
MfrVishay Siliconix
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-220-3
Power Dissipation (Max)156W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs193mOhm @ 9.5A, 10V
SeriesEF
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id5V @ 250?A