Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.36A (Ta), 113A (Tc)
Drain to Source Voltage.45 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .114 nC @ 10 V
Input Capacitance (Ciss.5920 pF @ 20 V
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CasePowerPAK? SO-8
Power Dissipation (Max)4.8W (Ta), 48W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs1.8mOhm @ 10A, 10V
SeriesTrenchFET? Gen IV
Supplier Device PackagePowerPAK? SO-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)+20V, -16V
Vgs(th) (Max) @ Id2.3V @ 250?A
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