ARNEW-16P3656-GT2018

B005T8QBVA

VISHAY SILICONIX SIR472DP-T1-GE3 N CHANNEL MOSFET, 30V, 20A, SOIC (1 piece)

VISHAY SILICONIX SIR472DP-T1-GE3 N CHANNEL MOSFET, 30V, 20A, SOIC (1 piece)zoom

Attributes

Key Value
Base Product NumberSIR472
CategoryDiscrete Semiconductor .
Current - Continuous Dr.20A (Tc)
Drain to Source Voltage.30 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .23 nC @ 10 V
Input Capacitance (Ciss.820 pF @ 15 V
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CasePowerPAK? SO-8
Power Dissipation (Max)3.9W (Ta), 29.8W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs12mOhm @ 13.8A, 10V
SeriesTrenchFET?
Supplier Device PackagePowerPAK? SO-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.5V @ 250?A

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
HotendaH18119800.2913000Vishay/Siliconix0.29 @ 100
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