B011N9QG1S

VISHAY SILICONIX SIR880DP-T1-GE3 N CHANNEL MOSFET (1 piece)

VISHAY SILICONIX SIR880DP-T1-GE3 N CHANNEL MOSFET (1 piece)zoom

Attributes

Key Value
Base Product NumberSIR880
CategoryDiscrete Semiconductor .
Current - Continuous Dr.60A (Tc)
Drain to Source Voltage.80 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .74 nC @ 10 V
Input Capacitance (Ciss.2440 pF @ 40 V
ManufacturerVISHAY
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CasePowerPAK? SO-8
Power Dissipation (Max)6.25W (Ta), 104W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs5.9mOhm @ 20A, 10V
SeriesTrenchFET?
Supplier Device PackagePowerPAK? SO-8
TechnologyMOSFET (Metal Oxide)
Type of transistorN-MOSFET
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.8V @ 250?A

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
HotendaH18073851.188112000Vishay/Siliconix1.188 @ 3000
TMESIR880DP-T1-GE31.5430003000VISHAY1.54 @ 3000
Future Electronics20804871.6230003000Vishay1.62 @ 3000
Digi-Key24424591.669813000Vishay Siliconix1.6698 @ 3000
thumbzoomNewark79R54051.7230003000VISHAY1.72 @ 3000
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