Attributes

Key Value
Base Product NumberSIRA60
CategoryDiscrete Semiconductor .
Current - Continuous Dr.100A (Tc)
Drain to Source Voltage.30 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .60 nC @ 4.5 V
Input Capacitance (Ciss.7650 pF @ 15 V
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CasePowerPAK? SO-8
Power Dissipation (Max)57W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs0.94mOhm @ 20A, 10V
SeriesTrenchFET? Gen IV
Supplier Device PackagePowerPAK? SO-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)+20V, -16V
Vgs(th) (Max) @ Id2.2V @ 250?A
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