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Vishay Siliconix SIS890DN-T1-GE3
manufacturer:

Attributes

Key ^Value
Base Product NumberSIS890
CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25?C30A (Tc)
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds802 pF @ 50 V
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case, Supplier Device PackagePowerPAK? 1212-8
Part StatusActive
Power Dissipation (Max)3.7W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs23.5mOhm @ 10A, 10V
SeriesTrenchFET?
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3V @ 250?A