Vishay Siliconix SISH116DN-T1-GE3

mpnSISH116DN-T1-GE3
brandname: Vishay Siliconix
manufacturername: Vishay Siliconix

Attributes

Key	Value
Base Product Number	SISH116
Category	Discrete Semiconductor .
Current - Continuous Dr.	10.5A (Ta)
Drain to Source Voltage.	40 V
Drive Voltage (Max Rds .	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	23 nC @ 4.5 V
Mfr	Vishay Siliconix
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	PowerPAK? 1212-8SH
Power Dissipation (Max)	1.5W (Ta)
Product Status	Active
Rds On (Max) @ Id, Vgs	7.8mOhm @ 16.4A, 10V
Series	TrenchFET?
Supplier Device Package	PowerPAK? 1212-8SH
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	2.5V @ 250?A