Attributes

Key Value
Base Product NumberSISS26
CategoryDiscrete Semiconductor .
Current - Continuous Dr.60A (Tc)
Drain to Source Voltage.60V
Drive Voltage (Max Rds .6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .37nC @ 10V
Input Capacitance (Ciss.1710pF @ 30V
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CasePowerPAK? 1212-8S
Part StatusActive
Power Dissipation (Max)57W (Tc)
Rds On (Max) @ Id, Vgs4.5mOhm @ 15A, 10V
SeriesTrenchFET? Gen IV
Supplier Device PackagePowerPAK? 1212-8S (3.3x.
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3.6V @ 250?A
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