Vishay Siliconix SQ2319ADS-T1_GE3

mpnSQ2319ADS-T1_GE3
brandname: Vishay Siliconix
manufacturername: Vishay Siliconix

Attributes

Key	Value
Base Product Number	SQ2319
Category	Discrete Semiconductor .
Current - Continuous Dr.	4.6A (Tc)
Drain to Source Voltage.	40 V
Drive Voltage (Max Rds .	4.5V, 10V
FET Feature	-
FET Type	P-Channel
Gate Charge (Qg) (Max) .	16 nC @ 10 V
Input Capacitance (Ciss.	620 pF @ 20 V
Mfr	Vishay Siliconix
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	TO-236-3, SC-59, SOT-23.
Part Status	Active
Power Dissipation (Max)	2.5W (Tc)
Rds On (Max) @ Id, Vgs	75mOhm @ 3A, 10V
Series	Automotive, AEC-Q101, T.
Supplier Device Package	SOT-23-3 (TO-236)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	2.5V @ 250?A