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Vishay Siliconix SQJ409EP-T1_GE3
manufacturer:

Attributes

Key Value
Base Product NumberSQJ409
CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25?C60A (Tc)
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds11000 pF @ 25 V
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / Case, Supplier Device PackagePowerPAK? SO-8
Part StatusActive
Power Dissipation (Max)68W (Tc)
Rds On (Max) @ Id, Vgs7mOhm @ 10A, 10V
SeriesAutomotive, AEC-Q101, TrenchFET?
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.5V @ 250?A