brand:
manufacturer:
Description:
N-Channel 60 V 110A (Tc) 3.75W (Ta), 375W (Tc) Surface Mount TO-263 (D?Pak)
Preferred Price:
7.51
Price:
7.51
Min Simple Price:
3.32
Absolute Min Price:
5.72
Min Price:
5.72
Dimensions:
[1.0, 1.0, 1.0]
qty:
21
simpleSku:
ODcwOQ:::SUM110N06-3M9H-E3
sku:
ODcwOQ::AE:SUM110N06-3M9H-E3@y0
condition:
11
seller:
Hotenda
amzMan:
vishay siliconix
HazMat:
False
DropShip:
False
Attributes
| Key ^ | Value |
|---|---|
| Alternate Part No. | 781-SUM110N063M9HE3 |
| Application | Automotive such as high-side switch, motor drives, 12 V battery |
| Base Product Number | SUM110 |
| Brand | Vishay / Siliconix |
| Category | Discrete Semiconductor Products |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Current - Continuous Drain (Id) @ 25?C | 110A (Tc) |
| Dimensions | 10.414 x 9.652 x 4.826 mm |
| Drain Current, Id - Continuous Drain Current | 110 A |
| Drain to Source On Resistance | 0.0082 Ohms |
| Drain to Source Voltage, Drain to Source Voltage (Vdss), Vds - Drain-Source Breakdown Voltage, Voltage, Breakdown, Drain to Source | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Fall Time | 14 ns |
| FET Feature | - |
| FET Type, Polarization, Transistor Polarity | N-Channel |
| Forward Transconductance | 30 S |
| Forward Voltage, Diode | 1.1 V |
| Gate Charge (Qg) (Max) @ Vgs | 300 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 15800 pF @ 25 V |
| Junction to Ambient Thermal Resistance | 40 ?C?W |
| Length | 0.41 in |
| Manufacturer | Vishay |
| Manufacturer Part No. | SUM110N06-3M9H-E3 |
| Maximum Operating Temperature | + 175 C, +175 ?C |
| Mfr | Vishay Siliconix |
| Minimum Operating Temperature | - 55 C, -55 ?C |
| Mounting Style | SMD/SMT |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Number of Pins | 3 |
| Operating and Storage Temperature | -55 to +175 C |
| Operating Temperature | -55?C ~ 175?C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | TO-263-3, D?Pak (2 Leads + Tab), TO-263AB |
| Package Type | TO-263 |
| Package/Case | D2PAK-2 |
| Packaging | Reel |
| Pd - Power Dissipation | 3.75 W |
| Power Dissipation | 375 W |
| Power Dissipation (Max) | 3.75W (Ta), 375W (Tc) |
| Product Category | MOSFET |
| Product Header | TrenchFET? Power MOSFET |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 3.9mOhm @ 30A, 10V |
| Rds On - Drain-Source Resistance | 3.9 mOhms |
| Resistance, Thermal, Junction to Case | 0.4 ?C/W |
| Rise Time | 160 ns |
| Series | TrenchFET?, SUM, SUM Series |
| Supplier Device Package | TO-263 (D?Pak) |
| Technology | MOSFET (Metal Oxide) |
| Total Gate Charge | 200 nC |
| Turn Off Delay Time, Typical Turn-Off Delay Time | 75 ns |
| Turn On Delay Time | 45 ns |
| Typical Gate Charge @ Vgs | 200 nC @ 10 V |
| Vgs (Max) | ?20V |
| Vgs - Gate-Source Breakdown Voltage | 20 V |
| Vgs(th) (Max) @ Id | 4.5V @ 250?A |
All Prices
| Img | Seller | Supplier SKU | Requested Price ^ | Calc MOQ Price | MOQ | In Stock | Lead Time | Brand | Weight | Preferred Tier |
|---|---|---|---|---|---|---|---|---|---|---|
| Hotenda | H1807570 | 3.32 | 1072.36 | 800 | 1600 | Vishay/Siliconix | 3.32 @ Qty: 800+ | |||
| us.rs-online.com | 70026023 | 5.55 | 1792.65 | 800 | 5 | Siliconix / Vishay | 5.55 @ Qty: 800+ | |||
 | swatee.com | SUM110N06-3M9H-E3 | 9.98 | 33.932 | 1 | 146 | Vishay | 9.98 @ Qty: 5+ |
