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Vishay Siliconix SUM110N06-3M9H-E3
manufacturer:

Attributes

Key ^Value
Base Product NumberSUM110
CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25?C110A (Tc)
Drain to Source Voltage (Vdss)60V
Drive Voltage (Max Rds On, Min Rds On)10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs300nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds15800pF @ 25V
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-263-3, D?Pak (2 Leads + Tab), TO-263AB
Part StatusObsolete
Power Dissipation (Max)3.75W (Ta), 375W (Tc)
Rds On (Max) @ Id, Vgs3.9mOhm @ 30A, 10V
SeriesTrenchFET?
Supplier Device PackageTO-263 (D2Pak)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4.5V @ 250?A